Triode/MOS tube/transistor/module
SHIKUES (Shike)
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NPN, Vceo=32V, Ic=1A, hfe=180~390
تفصیل
Littelfuse (American Littelfuse)
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Taiwan Semiconductor
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VBsemi (Wei Bi)
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Wuxi Unisplendour
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SI (deep love)
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CBI (Creation Foundation)
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FUXINSEMI (Fuxin Senmei)
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onsemi (Ansemi)
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This N-Channel MV MOSFET is produced using ON Semiconductor's advanced Power Trench process which incorporates Shielded Gate technology. This process has been optimized to minimize on-resistance while maintaining excellent switching performance with the industry's best soft body diode.
تفصیل
onsemi (Ansemi)
مینوفیکچررز
The FDMC7692S is produced using an advanced PowerTrench process, which is especially suited for minimizing on-resistance. This device is suitable for power and load switching applications commonly found in notebook computers and portable battery packs.
تفصیل
LGE (Lu Guang)
مینوفیکچررز
onsemi (Ansemi)
مینوفیکچررز
N-channel, 60V, 16.8A, 63mΩ@10V
تفصیل
FUXINSEMI (Fuxin Senmei)
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VBsemi (Wei Bi)
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TECH PUBLIC (Taizhou)
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ST (STMicroelectronics)
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