onsemi (Ansemi)
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پروڈکٹ کی تفصیلات کے لیے وضاحتیں دیکھیں۔
NCP5109BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V

NCP5109BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V
حصے کا نمبر
NCP5109BDR2G
قسم
Power Chip > Gate Driver IC
مینوفیکچرر/برانڈ
onsemi (Ansemi)
انکیپسولیشن
SOIC-8
پیکنگ
taping
پیکجوں کی تعداد
2500
تفصیل
The NCP5109 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
اقتباس کی درخواست کریں۔
براہ کرم تمام مطلوبہ فیلڈز کو مکمل کریں اور جمع کروائیں پر کلک کریں، ہم آپ سے 12 گھنٹے میں ای میل کے ذریعے رابطہ کریں گے۔ اگر آپ کو کوئی مسئلہ درپیش ہے، تو براہ کرم پر پیغامات یا ای میل بھیجیں۔ [email protected]، ہم جلد از جلد جواب دیں گے۔
اسٹاک میں 81488 PCS
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کے مطلوبہ الفاظ NCP5109BDR2G
NCP5109BDR2G الیکٹرانک اجزاء
NCP5109BDR2G سیلز
NCP5109BDR2G فراہم کنندہ
NCP5109BDR2G فراہم کنندہ
NCP5109BDR2G ڈیٹا ٹیبل
NCP5109BDR2G تصاویر
NCP5109BDR2G قیمت
NCP5109BDR2G پیشکش
NCP5109BDR2G کم ترین قیمت
NCP5109BDR2G تلاش کریں۔
NCP5109BDR2G خریداری
NCP5109BDR2G Chip