onsemi (Ansemi)
تصویر کی نمائندگی ہو سکتی ہے۔
پروڈکٹ کی تفصیلات کے لیے وضاحتیں دیکھیں۔
NCP5106BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCP5106BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
حصے کا نمبر
NCP5106BDR2G
قسم
Power Chip > Gate Driver IC
مینوفیکچرر/برانڈ
onsemi (Ansemi)
انکیپسولیشن
SOIC-8-150mil
پیکنگ
taping
پیکجوں کی تعداد
2500
تفصیل
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
اقتباس کی درخواست کریں۔
براہ کرم تمام مطلوبہ فیلڈز کو مکمل کریں اور جمع کروائیں پر کلک کریں، ہم آپ سے 12 گھنٹے میں ای میل کے ذریعے رابطہ کریں گے۔ اگر آپ کو کوئی مسئلہ درپیش ہے، تو براہ کرم پر پیغامات یا ای میل بھیجیں۔ [email protected]، ہم جلد از جلد جواب دیں گے۔
اسٹاک میں 75348 PCS
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کے مطلوبہ الفاظ NCP5106BDR2G
NCP5106BDR2G الیکٹرانک اجزاء
NCP5106BDR2G سیلز
NCP5106BDR2G فراہم کنندہ
NCP5106BDR2G فراہم کنندہ
NCP5106BDR2G ڈیٹا ٹیبل
NCP5106BDR2G تصاویر
NCP5106BDR2G قیمت
NCP5106BDR2G پیشکش
NCP5106BDR2G کم ترین قیمت
NCP5106BDR2G تلاش کریں۔
NCP5106BDR2G خریداری
NCP5106BDR2G Chip