SUB75P03-07-E3
Product Overview
Category
The SUB75P03-07-E3 belongs to the category of power MOSFETs.
Use
It is used for controlling and switching high-power circuits in various electronic devices and systems.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Low gate drive power requirement
Package
The SUB75P03-07-E3 is typically available in a TO-220 package, which provides efficient heat dissipation.
Essence
This power MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels or tubes and is available in varying quantities based on customer requirements.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 75A
- On-State Resistance (RDS(on)): 7mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Power Dissipation (PD): 200W
Detailed Pin Configuration
The SUB75P03-07-E3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-state resistance for minimal power loss
- High current handling capacity
- Fast switching speed for efficient circuit operation
- Robust construction for reliability in demanding applications
Advantages
- Efficient power management
- Suitable for high-power applications
- Reliable performance
- Compact design for space-saving installations
Disadvantages
- Higher cost compared to lower power handling components
- Requires careful thermal management due to high power dissipation
Working Principles
The SUB75P03-07-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The SUB75P03-07-E3 is widely used in: - Power supplies - Motor control systems - Inverters - Automotive electronics - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the SUB75P03-07-E3 include: - IRF3709ZPBF - FDP8870 - SI7850DP-T1-GE3 - AUIRF7739L2
In conclusion, the SUB75P03-07-E3 power MOSFET offers high-performance characteristics suitable for a wide range of high-power electronic applications, making it an essential component in modern electronic systems.
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What is the maximum drain-source voltage of SUB75P03-07-E3?
- The maximum drain-source voltage of SUB75P03-07-E3 is 30V.
What is the continuous drain current rating of SUB75P03-07-E3?
- The continuous drain current rating of SUB75P03-07-E3 is 75A.
What is the on-state resistance (RDS(on)) of SUB75P03-07-E3?
- The on-state resistance (RDS(on)) of SUB75P03-07-E3 is typically 7mΩ.
What type of package does SUB75P03-07-E3 come in?
- SUB75P03-07-E3 comes in a TO-263-3 package.
What are the typical applications for SUB75P03-07-E3?
- SUB75P03-07-E3 is commonly used in power management, motor control, and battery protection applications.
What is the gate-source voltage range for turning on SUB75P03-07-E3?
- The gate-source voltage range for turning on SUB75P03-07-E3 is typically 2.5V to 4V.
Does SUB75P03-07-E3 have built-in ESD protection?
- Yes, SUB75P03-07-E3 is designed with built-in ESD protection.
What is the junction temperature range for SUB75P03-07-E3?
- The junction temperature range for SUB75P03-07-E3 is -55°C to 175°C.
Is SUB75P03-07-E3 suitable for automotive applications?
- Yes, SUB75P03-07-E3 is suitable for automotive applications due to its high current handling capability and robust design.
Can SUB75P03-07-E3 be used in high-frequency switching applications?
- Yes, SUB75P03-07-E3 can be used in high-frequency switching applications due to its low on-state resistance and fast switching characteristics.