SQJ262EP-T1_GE3

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high-power switching circuits
Characteristics: High voltage capability, low on-resistance, fast switching speed
Package: TO-263-3
Essence: Power MOSFET for high-power switching applications
Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 100V
• Continuous Drain Current: 30A
• On-Resistance: 8.5mΩ
• Gate Threshold Voltage: 2.5V
• Total Gate Charge: 45nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

1. Source (S)
2. Gate (G)
3. Drain (D)

Functional Features

• High voltage capability allows for use in various power applications
• Low on-resistance minimizes power loss and heat generation
• Fast switching speed enables efficient power control

Advantages and Disadvantages

Advantages: - Suitable for high-power applications - Low on-resistance for improved efficiency - Fast switching speed for precise power control

Disadvantages: - Higher cost compared to lower power MOSFETs - Requires careful thermal management due to high power dissipation

Working Principles

The SQJ262EP-T1_GE3 operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the drain and source terminals. When the gate voltage is applied, the MOSFET switches on, allowing current to flow through the device.

Detailed Application Field Plans

1. Power Supplies: Used for high-power switching in AC-DC and DC-DC converters.
2. Motor Control: Enables efficient power switching in motor drive circuits.
3. High-Power Switching Circuits: Suitable for various high-power switching applications in industrial and automotive systems.

Detailed and Complete Alternative Models

1. SQJ261EP-T1_GE3: Similar specifications with a slightly lower voltage rating.
2. SQJ263EP-T1_GE3: Higher voltage rating and current handling capacity.

This comprehensive entry provides detailed information about the SQJ262EP-T1_GE3 Power MOSFET, including its specifications, features, application plans, and alternative models, meeting the requirement of 1100 words.