SQ3418EV-T1_GE3 Product Overview

Introduction

SQ3418EV-T1_GE3 is a semiconductor product belonging to the category of power MOSFETs. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: Power switching applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: TO-263-3
• Essence: High-performance power MOSFET
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 100V
• Continuous Drain Current (ID): 30A
• RDS(ON) Max @ VGS = 10V: 8.5mΩ
• Gate Threshold Voltage (VGS(th)): 2.5V - 4V
• Total Gate Charge (Qg): 24nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SQ3418EV-T1_GE3 follows the standard pin configuration for a TO-263-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• Fast switching speed for improved efficiency
• Low on-resistance for reduced power losses
• Enhanced thermal performance for reliability in high-power applications

Advantages and Disadvantages

Advantages

• High efficiency
• Low on-resistance
• Reliable thermal performance

Disadvantages

• Higher cost compared to traditional MOSFETs
• Sensitive to electrostatic discharge (ESD)

Working Principles

The SQ3418EV-T1_GE3 operates based on the principle of field-effect transistors, utilizing the control of voltage at the gate terminal to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SQ3418EV-T1_GE3 is suitable for various power switching applications, including: - Switching power supplies - Motor control - DC-DC converters - Inverters

Detailed and Complete Alternative Models

For users seeking alternative models, the following power MOSFETs can be considered: - IRF3205 - FDP8878 - AUIRF3710

In conclusion, the SQ3418EV-T1_GE3 power MOSFET offers high-performance characteristics suitable for diverse power switching applications, with specific attention to efficiency, on-resistance, and thermal reliability.

Word count: 346