VNV10N07

Product Overview

Category: Integrated Circuit (IC)

Use: VNV10N07 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications.

Characteristics: - High voltage capability - Low on-resistance - Fast switching speed - Low gate charge - Avalanche energy specified - RoHS compliant

Package: VNV10N07 is available in a TO-220 package, which provides excellent thermal performance and easy mounting.

Essence: This power MOSFET is an essential component in electronic devices that require efficient power management and control.

Packaging/Quantity: VNV10N07 is typically sold in reels or tubes containing a specific quantity of ICs, depending on the manufacturer's packaging standards.

Specifications

• Drain-Source Voltage (VDS): 70V
• Continuous Drain Current (ID): 10A
• Power Dissipation (PD): 50W
• Gate-Source Voltage (VGS): ±20V
• Drain-Source On-Resistance (RDS(on)): 0.1Ω (max)
• Input Capacitance (Ciss): 1500pF (typ)
• Output Capacitance (Coss): 300pF (typ)
• Reverse Transfer Capacitance (Crss): 200pF (typ)
• Operating Temperature Range: -55°C to +175°C

Detailed Pin Configuration

The VNV10N07 power MOSFET has three pins:

1. Drain (D): This pin is connected to the positive terminal of the load or circuit.
2. Gate (G): The gate pin controls the conductivity of the MOSFET by applying a voltage to it.
3. Source (S): The source pin is connected to the negative terminal of the load or circuit.

Functional Features

• High voltage capability allows VNV10N07 to handle a wide range of applications.
• Low on-resistance minimizes power losses and improves efficiency.
• Fast switching speed enables rapid response in switching circuits.
• Low gate charge reduces power consumption and enhances performance.
• Avalanche energy specified ensures reliable operation under high-stress conditions.
• RoHS compliance guarantees environmental friendliness.

Advantages and Disadvantages

Advantages: - High voltage capability - Low on-resistance - Fast switching speed - Low gate charge - Reliable operation under high-stress conditions

Disadvantages: - Limited operating temperature range (-55°C to +175°C) - Requires proper heat dissipation for optimal performance

Working Principles

VNV10N07 operates based on the principles of a MOSFET. When a voltage is applied to the gate pin, it creates an electric field that controls the flow of current between the drain and source pins. By varying the gate voltage, the MOSFET can be turned on or off, allowing or blocking the current flow.

Detailed Application Field Plans

VNV10N07 finds applications in various electronic systems, including but not limited to: - Power supplies - Motor control circuits - Lighting systems - Audio amplifiers - Switching regulators - Inverters

Detailed and Complete Alternative Models

1. VNV10N07-E: Similar specifications with enhanced thermal characteristics.
2. VNV10N07-G: Lower on-resistance variant suitable for high-current applications.
3. VNV10N07-H: Higher voltage rating version for specialized applications.

These alternative models provide flexibility in selecting the most suitable power MOSFET based on specific requirements.

In conclusion, VNV10N07 is a power MOSFET designed for various electronic applications. Its high voltage capability, low on-resistance, and fast switching speed make it an ideal choice for power management and control. With proper heat dissipation, it offers reliable operation under high-stress conditions. The detailed pin configuration, functional features, advantages, and disadvantages provide a comprehensive understanding of this IC. Its applications span across different fields, and alternative models offer additional options to meet specific needs.