VND83013TR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Power Driver
• Characteristics: High current capability, low voltage drop, thermal shutdown protection
• Package: PowerSSO-12
• Essence: Monolithic device integrating a high-side and low-side power MOSFET
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Supply Voltage Range: 4.5V to 36V
• Output Current: Up to 2A
• On-State Resistance (RDS(on)): 0.14Ω (typical)
• Operating Temperature Range: -40°C to +150°C

Detailed Pin Configuration

1. IN1: Input control signal for the high-side power MOSFET
2. GND: Ground reference
3. OUT1: Output of the high-side power MOSFET
4. VS: Supply voltage for the high-side power MOSFET
5. PGND: Power ground reference
6. OUT2: Output of the low-side power MOSFET
7. IN2: Input control signal for the low-side power MOSFET
8. EN: Enable pin for the device
9. VCC: Logic supply voltage
10. SENSE: Sense pin for external current sensing
11. FAULT: Fault indication output
12. REF: Reference voltage for fault detection

Functional Features

• Integrated high-side and low-side power MOSFETs for driving loads
• Built-in thermal shutdown protection to prevent overheating
• Fast demagnetization of inductive loads with freewheeling capability
• Low quiescent current consumption
• Short-circuit protection with automatic restart
• Undervoltage lockout (UVLO) protection

Advantages

• Compact and integrated solution for driving loads
• High current capability allows driving of demanding loads
• Low voltage drop minimizes power dissipation
• Thermal shutdown protection ensures safe operation
• Freewheeling capability protects inductive loads

Disadvantages

• Limited output current (up to 2A)
• Restricted supply voltage range (4.5V to 36V)
• Relatively high on-state resistance (0.14Ω)

Working Principles

The VND83013TR is a monolithic device that combines a high-side and low-side power MOSFET in a single package. It is designed to drive loads efficiently and reliably. The input control signals (IN1 and IN2) determine the state of the power MOSFETs, allowing the device to switch the load on or off. The integrated thermal shutdown protection prevents excessive heating of the device, ensuring its longevity.

Detailed Application Field Plans

The VND83013TR is commonly used in various applications, including: 1. Automotive systems: Power window control, seat adjustment, mirror control 2. Industrial automation: Motor control, solenoid control, relay drivers 3. Consumer electronics: LED lighting control, small motor control 4. Home appliances: White goods, kitchen appliances, HVAC systems

Detailed and Complete Alternative Models

1. VND83013TR-E: Similar to VND83013TR with extended temperature range (-40°C to +150°C)
2. VND83013TR-E: Similar to VND83013TR with enhanced ESD protection
3. VND83013TR-E: Similar to VND83013TR with higher output current capability

(Note: The above alternative models are fictional and provided for illustrative purposes only.)

This entry provides an overview of the VND83013TR power driver IC. It includes basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models. The VND83013TR is a versatile device suitable for various applications requiring efficient and reliable load driving capabilities.