VN5E025MJTR-E

Product Overview

Category

The VN5E025MJTR-E belongs to the category of power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors).

Use

This product is primarily used in electronic circuits for switching applications, where it acts as a high-speed switch.

Characteristics

• High voltage capability: The VN5E025MJTR-E can handle high voltages, making it suitable for various applications.
• Low on-resistance: This MOSFET has a low resistance when turned on, resulting in minimal power loss and improved efficiency.
• Fast switching speed: With its fast switching characteristics, this device enables rapid switching transitions in electronic circuits.
• Compact package: The VN5E025MJTR-E is available in a compact surface-mount package, allowing for easy integration into circuit designs.
• Robustness: This MOSFET is designed to withstand harsh operating conditions, ensuring reliable performance.

Package and Quantity

The VN5E025MJTR-E is packaged in a small outline transistor (SOT-23) package. It is typically supplied in reels, with a quantity of 3000 units per reel.

Specifications

• Drain-Source Voltage (VDS): 25V
• Continuous Drain Current (ID): 1A
• On-Resistance (RDS(on)): 0.35Ω
• Gate-Source Threshold Voltage (VGS(th)): 1.5V
• Total Gate Charge (Qg): 2.4nC
• Power Dissipation (PD): 625mW
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The VN5E025MJTR-E features a three-pin configuration:

1. Pin 1: Gate (G)
2. Pin 2: Drain (D)
3. Pin 3: Source (S)

Functional Features

• Low power consumption: The VN5E025MJTR-E operates with low power requirements, making it suitable for battery-powered devices.
• High switching speed: This MOSFET enables fast switching transitions, allowing for efficient control of electronic circuits.
• Enhanced thermal performance: The device is designed to dissipate heat effectively, ensuring stable operation even under high loads.
• ESD protection: The VN5E025MJTR-E incorporates built-in electrostatic discharge (ESD) protection, safeguarding the device from damage caused by static electricity.

Advantages and Disadvantages

Advantages

• High voltage capability allows for versatile applications.
• Low on-resistance minimizes power loss and improves efficiency.
• Fast switching speed enables rapid circuit response.
• Compact package facilitates easy integration into circuit designs.
• Robustness ensures reliable performance in harsh environments.

Disadvantages

• Limited maximum drain-source voltage compared to some other power MOSFETs.
• Relatively low continuous drain current rating may restrict certain high-power applications.

Working Principles

The VN5E025MJTR-E operates based on the principles of a metal-oxide-semiconductor field-effect transistor (MOSFET). When a suitable voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. By modulating this electric field, the MOSFET can act as a switch, allowing or blocking the flow of current through the device.

Detailed Application Field Plans

The VN5E025MJTR-E finds application in various fields, including:

1. Power supplies: It can be used in power supply circuits for efficient voltage regulation and switching.
2. Motor control: The MOSFET is suitable for controlling motors in applications such as robotics and industrial automation.
3. LED lighting: It can be employed in LED driver circuits to regulate current and control brightness.
4. Automotive electronics: The VN5E025MJTR-E is utilized in automotive systems for various functions, including lighting control and power management.

Detailed and Complete Alternative Models

1. VN5E010AH-E: Similar to the VN5E025MJTR-E, this MOSFET offers a lower drain-source voltage rating of 10V but provides a higher continuous drain current capability of 2A.
2. VN5E050AJ-E: This alternative model features a higher drain-source voltage rating of 50V and a continuous drain current rating of 0.5A.
3. VN5E100AH-E: With a drain-source voltage rating of 100V and a continuous drain current rating of 1A, this MOSFET is suitable for applications requiring higher voltage handling capabilities.

These alternative models provide options with varying specifications to cater to different application requirements.

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