MRF7S19210HR5

Introduction

The MRF7S19210HR5 is a high-power RF transistor designed for use in various applications. This entry provides an overview of the product, including its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: RF Transistor
• Use: Power amplification in RF applications
• Characteristics: High power, high frequency operation
• Package: Ceramic package
• Essence: Amplification of RF signals
• Packaging/Quantity: Individual units

Specifications

• Frequency Range: 1750-1950 MHz
• Power Output: 10 Watts
• Gain: 14 dB
• Efficiency: 55%
• Voltage: 28V
• Current: 1.5A

Detailed Pin Configuration

The MRF7S19210HR5 has a detailed pin configuration as follows: - Pin 1: RF Input - Pin 2: Ground - Pin 3: RF Output - Pin 4: Bias

Functional Features

• High power output
• Wide frequency range
• High efficiency
• Low distortion

Advantages and Disadvantages

Advantages

• High power handling capability
• Wide frequency coverage
• High efficiency
• Reliable performance

Disadvantages

• Higher cost compared to lower power transistors
• Requires careful thermal management

Working Principles

The MRF7S19210HR5 operates on the principle of amplifying RF signals using high-frequency transistor technology. It utilizes a combination of high voltage and current to achieve the desired power output while maintaining efficiency and linearity.

Detailed Application Field Plans

The MRF7S19210HR5 is suitable for various applications, including: - Base station power amplifiers - Radar systems - Wireless communication systems - Test equipment

Detailed and Complete Alternative Models

Some alternative models to the MRF7S19210HR5 include: - MRF7S19210HSR5 - MRF7S19210NR5 - MRF7S19210LR5

In conclusion, the MRF7S19210HR5 is a high-power RF transistor with wide application in RF power amplification. Its high power output, wide frequency range, and efficiency make it a suitable choice for various RF applications.

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