PHB47NQ10T,118
Product Category: Power MOSFET
Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: High voltage, high current capability, low on-resistance - Package: TO-263 (D2PAK) - Essence: N-channel MOSFET - Packaging/Quantity: Tape and reel, 800 units per reel
Specifications: - Voltage - Drain-Source Breakdown (Min): 100V - Current - Continuous Drain (Id) @ 25°C: 47A - Rds On (Max) @ Id, Vgs: 10mOhm @ 23A, 10V - Vgs(th) (Max) @ Id: 2.35V @ 250µA - Gate Charge (Qg) @ Vgs: 75nC @ 10V
Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source
Functional Features: - Low on-resistance - Fast switching speed - Low gate charge - Avalanche energy specified - Improved dv/dt capability
Advantages: - High efficiency in power switching applications - Reduced power dissipation - Enhanced thermal performance - Reliable operation at high frequencies
Disadvantages: - Sensitivity to static electricity - Potential for thermal runaway if not properly heatsinked
Working Principles: The PHB47NQ10T,118 operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals.
Detailed Application Field Plans: - Switching power supplies - Motor control - DC-DC converters - Inverters
Detailed and Complete Alternative Models: - IRF3709ZPBF - FDP8878 - AUIRF3710S
This comprehensive entry provides a detailed overview of the PHB47NQ10T,118 Power MOSFET, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
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What is PHB47NQ10T,118?
- PHB47NQ10T,118 is a power MOSFET transistor designed for use in various technical solutions requiring high power and efficiency.
What are the key specifications of PHB47NQ10T,118?
- The key specifications include a drain-source voltage (VDS) of 100V, continuous drain current (ID) of 47A, and low on-resistance (RDS(on)).
In what applications can PHB47NQ10T,118 be used?
- It can be used in applications such as motor control, power supplies, DC-DC converters, and other high-power electronic systems.
What is the thermal performance of PHB47NQ10T,118?
- The device has excellent thermal performance due to its low RDS(on) and efficient packaging, making it suitable for high-power applications.
Does PHB47NQ10T,118 require any special driving circuitry?
- It is recommended to use appropriate gate driving circuitry to ensure optimal performance and reliability.
What are the advantages of using PHB47NQ10T,118 in technical solutions?
- The advantages include high power handling capability, low on-resistance, and efficient switching characteristics, leading to improved system performance.
Are there any application notes or reference designs available for PHB47NQ10T,118?
- Yes, the manufacturer provides application notes and reference designs to assist with the implementation of PHB47NQ10T,118 in various technical solutions.
Can PHB47NQ10T,118 be used in automotive applications?
- Yes, it is suitable for automotive applications where high power and efficiency are required, but it is important to consider specific automotive-grade requirements.
What are the typical operating temperatures for PHB47NQ10T,118?
- The device can typically operate within a temperature range of -55°C to 175°C, making it suitable for a wide range of environments.
Where can I find detailed technical documentation for PHB47NQ10T,118?
- Detailed technical documentation, including datasheets and application notes, can be found on the manufacturer's website or through authorized distributors.