PDTA144VU,115

Product Category: Transistor

Basic Information Overview: - Category: Bipolar (BJT) Transistors - Pre-Biased - Use: Amplification and switching of electronic signals - Characteristics: Small size, high gain, low noise, and low power consumption - Package: SOT666 - Essence: NPN Resistor-Equipped Transistor (RET) - Packaging/Quantity: Tape & Reel (3,000 units per reel)

Specifications: - Voltage - Collector Emitter Breakdown (Max): 50V - Current - Collector (Ic) (Max): 100mA - Power - Max: 150mW - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 5V - Transition Frequency (Typ): 250MHz

Detailed Pin Configuration: - Pin 1: Base - Pin 2: Emitter - Pin 3: Collector

Functional Features: - High current gain - Low voltage drop - Small form factor

Advantages: - Suitable for high-density circuit designs - Low power consumption - Reliable amplification performance

Disadvantages: - Limited maximum voltage and current ratings - Sensitive to temperature variations

Working Principles: The PDTA144VU,115 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.

Detailed Application Field Plans: - Audio amplification circuits - Signal processing modules - Switching applications in portable electronic devices

Detailed and Complete Alternative Models: - BC847C,115 - BC856B,115 - BC846B,115

This comprehensive entry provides a detailed overview of the PDTA144VU,115, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.