PC28F256P33BFF TR

Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: BGA (Ball Grid Array)
• Essence: Provides reliable and efficient data storage for various electronic devices
• Packaging/Quantity: Available in reels, quantity depends on customer requirements

Specifications

• Capacity: 256 Megabits (32 Megabytes)
• Interface: Parallel
• Voltage Range: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Erase/Program Cycles: 100,000 minimum
• Data Retention: 10 years minimum

Pin Configuration

The PC28F256P33BFF TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. WP#
46. RY/BY#
47. VSS
48. VCC

Functional Features

• High-speed read and write operations for efficient data access
• Reliable data storage with a long data retention period
• Low power consumption for energy-efficient operation
• Built-in error correction codes (ECC) for data integrity
• Support for various memory management techniques

Advantages

• Large storage capacity allows for storing a significant amount of data
• High-speed operations enable quick data access and transfer
• Non-volatile memory ensures data retention even during power loss
• Wide voltage range compatibility enhances device compatibility
• Compact BGA package offers space-saving benefits

Disadvantages

• Limited erase/program cycles may affect the lifespan of the memory
• Higher cost compared to other types of memory
• Parallel interface may limit compatibility with newer devices

Working Principles

The PC28F256P33BFF TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. The memory cells are made up of floating-gate transistors that can hold electrical charges, representing binary data.

During write operations, the memory cells are programmed by applying high voltages to the control gates, which trap charges in the floating gates. Reading data involves sensing the presence or absence of charges in the memory cells.

The memory controller manages the read, write, and erase operations, ensuring data integrity and efficient utilization of the memory space.

Detailed Application Field Plans

The PC28F256P33BFF TR is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include:

1. Consumer Electronics: Used in smartphones, tablets, digital cameras, and portable media players for storing user data, operating systems, and firmware.
2. Automotive: Integrated into infotainment systems, navigation systems, and engine control units (ECUs) to store critical data and software.
3. Industrial Automation: Utilized in programmable logic controllers (PLCs), human-machine interfaces (HMIs), and data loggers for data storage and program execution.
4. Networking Equipment: Incorporated in routers, switches, and network attached storage (NAS) devices for storing configuration data and firmware.
5. Medical Devices: Used in medical imaging equipment, patient monitoring systems, and diagnostic devices for storing patient data and software.

Detailed and Complete Alternative Models

1. PC28F256P33BFE TR

   • Similar specifications and features as PC28F256P33BFF TR
   • Different package type (TSOP instead of BGA)

2. PC28F512P30BFF TR

   • Higher capacity (512 Megabits)
   • Similar specifications and features as PC28F256P33BFF TR
   • BGA package

3