PC28F256G18AF TR

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Surface Mount Technology (SMT)
• Essence: NAND Flash memory chip
• Packaging/Quantity: Tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 256 gigabits (32 gigabytes)
• Interface: Parallel
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The PC28F256G18AF TR follows a standard pin configuration for parallel flash memory chips. The detailed pinout is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A23: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RE#: Read enable control
9. WP#: Write protect control
10. RY/BY#: Ready/Busy status output
11. RP#/VP#: Reset/Program verify control
12. CLE: Command latch enable
13. ALE: Address latch enable
14. BYTE#: Byte enable control
15. NC: No connection

Functional Features

• High-Speed Performance: The PC28F256G18AF TR offers fast read and write speeds, making it suitable for applications that require quick data access.
• Reliability: With a high endurance of up to 100,000 program/erase cycles and data retention of up to 10 years, this flash memory chip ensures long-term reliability.
• Large Storage Capacity: With a capacity of 256 gigabits (32 gigabytes), it provides ample space for storing large amounts of data.
• Low Power Consumption: The chip is designed to operate efficiently with low power consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages: - High storage capacity - Fast read/write speeds - Reliable and durable - Low power consumption

Disadvantages: - Relatively higher cost compared to lower capacity flash memory chips - Limited compatibility with certain older devices due to the parallel interface

Working Principles

The PC28F256G18AF TR utilizes NAND Flash technology for data storage. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data by varying the charge level on the floating gate. When reading or writing data, the chip uses electrical signals to control the flow of electrons within the memory cells.

Detailed Application Field Plans

The PC28F256G18AF TR is widely used in various electronic devices that require non-volatile data storage, such as:

1. Solid-State Drives (SSDs)
2. Digital Cameras
3. Smartphones and Tablets
4. Automotive Infotainment Systems
5. Industrial Control Systems
6. Medical Devices

Alternative Models

For users seeking alternative options, the following flash memory chips can be considered:

1. PC28F128G18AF TR: 128 gigabit capacity, similar specifications to PC28F256G18AF TR
2. PC28F512G18AF TR: 512 gigabit capacity, higher storage capacity than PC28F256G18AF TR
3. PC28F256G18AM TR: Same capacity and specifications as PC28F256G18AF TR, but with a different package type (BGA instead of SMT)

These alternative models provide flexibility in choosing the most suitable flash memory chip based on specific requirements.

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