NAND512R3A2SZAXE

Product Overview

• Category: Integrated Circuit (IC)
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High-density storage
  • Fast read and write speeds
• Package: Surface Mount Technology (SMT)
• Essence: NAND flash memory chip
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Memory Capacity: 512 Megabits (64 Megabytes)
• Organization: 8 bits x 4096 pages x 256 bytes
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Serial Peripheral Interface (SPI)
• Data Transfer Rate: Up to 50 Megabits per second (Mbps)
• Erase/Program Cycle Endurance: 100,000 cycles
• Data Retention: Up to 10 years

Detailed Pin Configuration

The NAND512R3A2SZAXE has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Suspends a serial sequence temporarily
4. WP: Write protect input
5. SCK: Serial clock input
6. SI: Serial data input
7. SO: Serial data output
8. CS: Chip select input

Functional Features

• Page Read Operation: Allows reading of data from a selected page
• Page Program Operation: Enables programming of data into a selected page
• Block Erase Operation: Erases all data within a selected block
• Random Access: Supports random access to any memory location
• Error Correction Code (ECC): Provides data integrity and error detection/correction
• Wear-Leveling: Distributes data evenly across memory cells to extend lifespan

Advantages and Disadvantages

Advantages: - High storage density - Fast read and write speeds - Non-volatile memory retains data even without power - Compact package size - Low power consumption

Disadvantages: - Limited erase/program cycle endurance - Relatively higher cost compared to other memory technologies - Susceptible to electrical interference

Working Principles

The NAND512R3A2SZAXE utilizes a NAND flash memory architecture. It consists of a grid of memory cells, each capable of storing multiple bits of data. These cells are organized into pages, which are further grouped into blocks.

During a read operation, the selected page is accessed by applying appropriate voltages to the memory cells. The stored data is then retrieved and transferred to the output pins. Similarly, during a program operation, new data is programmed into the selected page.

To erase data, an entire block is cleared simultaneously. This process involves applying high voltages to the memory cells, resetting them to an erased state. The erased block can then be reprogrammed with new data.

Detailed Application Field Plans

The NAND512R3A2SZAXE is widely used in various electronic devices that require non-volatile data storage. Some application fields include:

1. Solid-State Drives (SSDs)
2. USB Flash Drives
3. Digital Cameras
4. Mobile Phones
5. Tablets
6. Portable Media Players
7. Automotive Infotainment Systems
8. Industrial Control Systems

Detailed and Complete Alternative Models

1. NAND256R3A2SZAXE: 256 Megabit (32 Megabyte) capacity
2. NAND1G3A2SZAXE: 1 Gigabit (128 Megabyte) capacity
3. NAND2G3A2SZAXE: 2 Gigabit (256 Megabyte) capacity
4. NAND4G3A2SZAXE: 4 Gigabit (512 Megabyte) capacity
5. NAND8G3A2SZAXE: 8 Gigabit (1 Gigabyte) capacity

These alternative models offer different memory capacities to suit various application requirements.

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