MT47H128M16RT-25E XIT:C TR

Product Overview

Category

The MT47H128M16RT-25E XIT:C TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation: The MT47H128M16RT-25E XIT:C TR offers fast data access and transfer rates, enabling efficient processing of large amounts of information.
• Large storage capacity: With a capacity of 128 megabits (16 megabytes), this memory module can store a significant amount of data.
• Low power consumption: The product is designed to minimize energy usage, making it suitable for battery-powered devices.
• Reliable performance: The MT47H128M16RT-25E XIT:C TR is built with robust materials and undergoes rigorous testing to ensure durability and consistent functionality.
• Compact package: The memory module is packaged in a small form factor, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT47H128M16RT-25E XIT:C TR is typically sold in trays or reels, containing multiple units per package. The exact quantity may vary depending on the supplier and customer requirements.

Specifications

• Part Number: MT47H128M16RT-25E XIT:C TR
• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 128 Megabits x 16 bits
• Operating Voltage: 2.5V
• Speed Grade: 25E
• Package Type: XIT:C TR
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT47H128M16RT-25E XIT:C TR has a specific pin configuration that enables proper connection and communication with the host device. The detailed pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VDD
38. /RAS
39. /CAS
40. /WE
41. /CS
42. BA0
43. BA1
44. VSS
45. CLK
46. CKE
47. /CKE
48. /RESET
49. VDD
50. VSS

Functional Features

The MT47H128M16RT-25E XIT:C TR offers several functional features that enhance its performance and usability:

1. High-speed data access: The memory module provides fast read and write operations, enabling quick retrieval and storage of information.
2. Burst mode support: It supports burst mode, allowing for efficient sequential data transfers.
3. Auto-refresh capability: The product automatically refreshes stored data to maintain its integrity and prevent data loss.
4. Power-saving modes: The MT47H128M16RT-25E XIT:C TR incorporates power-saving features to minimize energy consumption during idle periods.
5. Error correction: It includes error correction mechanisms to detect and correct data errors, ensuring data accuracy.

Advantages and Disadvantages

Advantages

• High-speed operation enables efficient data processing.
• Large storage capacity accommodates a significant amount of data.
• Low power consumption makes it suitable for battery-powered devices.
• Reliable performance ensures durability and consistent functionality.
• Compact package allows for easy integration into various electronic devices.

Disadvantages

• May be relatively expensive compared to other memory options.
• Requires proper handling and installation to prevent damage.

Working Principles

The MT47H128M16RT-25E XIT:C TR operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. When the host device requests data, the memory module retrieves and transfers it through the appropriate pins.

Detailed Application Field Plans

The MT47H128M16RT-25E X