MT29F64G08AKABAC5:B

Product Overview

Category

MT29F64G08AKABAC5:B belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08AKABAC5:B offers a storage capacity of 64 gigabits (8 gigabytes).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures durability and long-term reliability.
• Compact package: The product comes in a small form factor, making it suitable for integration into compact electronic devices.
• Low power consumption: MT29F64G08AKABAC5:B is designed to consume minimal power, enhancing the battery life of portable devices.

Package and Quantity

The MT29F64G08AKABAC5:B NAND flash memory is typically packaged in a surface-mount package (SMD) with a specific pin configuration. The quantity may vary depending on the manufacturer's packaging specifications.

Specifications

• Storage Capacity: 64 gigabits (8 gigabytes)
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Erase/Program Cycles: Up to 10,000 cycles

Pin Configuration

The detailed pin configuration for MT29F64G08AKABAC5:B is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. CE#: Chip enable
5. CLE: Command latch enable
6. ALE: Address latch enable
7. RE#: Read enable
8. WE#: Write enable
9. R/B#: Ready/Busy status
10. DQ0-DQ7: Data input/output

Note: The pin configuration may vary depending on the specific package and manufacturer.

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of multiple memory cells simultaneously, improving efficiency.
• Random Access: Provides quick access to any location within the memory for read or write operations.
• Wear Leveling: Distributes data evenly across the memory cells to prevent premature wear-out of specific areas.
• Error Correction Code (ECC): Implements error correction techniques to ensure data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Compact form factor
• Low power consumption
• Reliable performance

Disadvantages

• Limited erase/program cycles
• Susceptible to physical damage if mishandled

Working Principles

MT29F64G08AKABAC5:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge stored within it. When data is written, the charge is adjusted to represent the desired information. Reading the data involves measuring the electrical charge in each memory cell to retrieve the stored information.

Detailed Application Field Plans

MT29F64G08AKABAC5:B finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Alternative Models

Some alternative models that offer similar functionality to MT29F64G08AKABAC5:B include: - Samsung K9K8G08U0B - Toshiba TH58NVG7D2FLA89 - Micron MT29F64G08CBABA

These models provide comparable storage capacity, performance, and features.

In conclusion, MT29F64G08AKABAC5:B is a NAND flash memory product that offers high storage capacity, fast data transfer rate, and reliable performance. It finds applications in various electronic devices and has alternative models with similar functionality.