MT29F32G08AFACAWP:C

Product Overview

Category

MT29F32G08AFACAWP:C belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F32G08AFACAWP:C has a storage capacity of 32 gigabytes (GB).
• Fast data transfer rate: It offers high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures durability and reliability.
• Low power consumption: It operates on low power, making it suitable for portable devices.
• Compact package: The MT29F32G08AFACAWP:C comes in a small form factor, enabling easy integration into various devices.

Package and Quantity

The MT29F32G08AFACAWP:C is packaged in a surface-mount TSOP (Thin Small Outline Package) with 48 pins. It is typically sold in quantities of one unit per package.

Specifications

• Storage Capacity: 32 GB
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Erase/Program Cycles: Up to 10,000 cycles

Pin Configuration

The detailed pin configuration of MT29F32G08AFACAWP:C is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. R/B#
8. NC
9. NC
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Page Read/Program/Erase: The MT29F32G08AFACAWP:C allows for efficient reading, programming, and erasing of data at the page level.
• Block Management: It supports various block management techniques to optimize performance and extend the lifespan of the memory.
• Error Correction Code (ECC): The NAND flash memory incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: This feature evenly distributes write operations across the memory cells, preventing premature wear on specific blocks.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited erase/program cycles compared to other non-volatile memory technologies
• Relatively higher cost per gigabyte compared to traditional hard disk drives

Working Principles

The MT29F32G08AFACAWP:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using a combination of voltage levels. When data is written, erased, or read, specific electrical signals are applied to the memory cells to modify their state and retrieve stored information.

Detailed Application Field Plans

The MT29F32G08AFACAWP:C is widely used in various electronic devices that require high-capacity data storage. Some of its application fields include:

1. Smartphones and tablets
2. Digital cameras and camcorders
3. Solid-state drives (SSDs)
4. Portable media players
5. Automotive infotainment systems
6. Industrial control systems
7. Medical devices
8. Gaming consoles

Detailed Alternative Models

• MT29F32G08CBACAWP:C
• MT29F32G08EBACAWP:C
• MT29F32G08FBACAWP:C
• MT29F32G08GBACAWP:C

These alternative models offer similar specifications and functionality to the MT29F32G08AFACAWP:C, providing options for different requirements and price points.

In conclusion, the MT29F32G08AFACAWP:C NAND flash memory offers high storage capacity, fast data