MT29F32G08AECBBH1-12:B

Product Overview

Category

MT29F32G08AECBBH1-12:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F32G08AECBBH1-12:B offers a storage capacity of 32 gigabits (4 gigabytes).
• Fast data transfer rate: It supports high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory provides reliable and durable data storage.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F32G08AECBBH1-12:B is available in a compact package, ensuring easy integration into various electronic devices.

Packaging/Quantity

The MT29F32G08AECBBH1-12:B is typically packaged in surface mount technology (SMT) packages. The exact packaging type and quantity may vary depending on the manufacturer's specifications.

Specifications

• Part Number: MT29F32G08AECBBH1-12:B
• Memory Type: NAND Flash
• Storage Capacity: 32 gigabits (4 gigabytes)
• Organization: 8 bits x 4096 pages x 2048 blocks
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The MT29F32G08AECBBH1-12:B has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. RE#
31. WE#
32. WP#
33. R/B#
34. CE#
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. GND
47. NC
48. NC

Functional Features

• Page Read/Program/Erase Operations: The MT29F32G08AECBBH1-12:B supports efficient read, program, and erase operations at the page level.
• Block Management: It incorporates advanced block management algorithms to optimize performance and extend the lifespan of the memory.
• Error Correction Code (ECC): This NAND flash memory utilizes ECC techniques to ensure data integrity and reliability.
• Wear-Leveling: The wear-leveling feature evenly distributes write operations across the memory blocks, preventing premature wear-out of specific areas.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance ensures data integrity and durability.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of memory.

Working Principles

The MT29F32G08AECBBH1-12:B is based on the NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge in the floating gate is measured to determine the logic state of each memory cell. The device operates using a parallel interface, allowing for efficient data transfer between the memory and the host device.

Detailed Application Field Plans

The MT29F32G08AECBBH1-12:B finds applications in various electronic devices that require non-volatile data storage. Some common application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems -