MT29F1G08ABAEAH4-ITX:E

Product Overview

Category

MT29F1G08ABAEAH4-ITX:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABAEAH4-ITX:E offers a storage capacity of 1 gigabit (1 Gb), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product ensures reliable data retention and endurance, making it suitable for long-term use.
• Compact package: It comes in a small form factor package, enabling easy integration into different electronic devices.
• Low power consumption: The MT29F1G08ABAEAH4-ITX:E is designed to consume minimal power, enhancing battery life in portable devices.

Packaging/Quantity

The MT29F1G08ABAEAH4-ITX:E is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Storage Capacity: 1 Gb
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of MT29F1G08ABAEAH4-ITX:E is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. R/B#
8. WP#
9. NC
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Page Program Operation: The MT29F1G08ABAEAH4-ITX:E supports fast and efficient page program operations, allowing for quick data storage.
• Block Erase Operation: It enables block erase operations, facilitating the removal of unwanted data.
• Random Access: This NAND flash memory allows random access to specific memory locations, enabling efficient data retrieval.
• Error Correction Code (ECC): The product incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: It implements wear-leveling techniques to evenly distribute write operations across memory cells, enhancing overall lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Compact package
• Low power consumption

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per unit compared to traditional hard disk drives

Working Principles

The MT29F1G08ABAEAH4-ITX:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on its floating gate. The data is accessed by applying appropriate voltages to the control gates and reading the resulting electrical current.

Detailed Application Field Plans

The MT29F1G08ABAEAH4-ITX:E finds application in various electronic devices, including: - Smartphones - Tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

Some alternative models to MT29F1G08ABAEAH4-ITX:E include: - MT29F1G08ABADAWP-ITX:E - MT29F1G08ABADAWP-IT:E - MT29F1G08ABADAWP-ITE:E - MT29F1G08ABADAWP-ITEH:E

These alternative models offer similar specifications and functionality, providing flexibility for different design requirements.

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