M29F400FT55M3E2

Product Overview

Category

The M29F400FT55M3E2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems. It provides a reliable and long-term storage solution for various applications.

Characteristics

• Non-volatile: The M29F400FT55M3E2 retains stored data even when power is removed.
• High capacity: With a capacity of 4 megabits (512 kilobytes), it can store a significant amount of data.
• Fast access time: The device offers quick read and write operations, ensuring efficient data retrieval and storage.
• Low power consumption: The M29F400FT55M3E2 is designed to minimize power usage, making it suitable for battery-powered devices.
• Durable: It can withstand multiple read and write cycles without compromising performance.

Package and Quantity

The M29F400FT55M3E2 is available in a surface-mount package. The specific package type and quantity may vary depending on the manufacturer and distributor.

Essence

The essence of the M29F400FT55M3E2 lies in its ability to provide reliable and non-volatile data storage for electronic systems. It ensures data integrity and enables seamless operation in various applications.

Specifications

• Memory Capacity: 4 Megabits (512 Kilobytes)
• Supply Voltage: 2.7V - 3.6V
• Access Time: 55 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycles: 10,000 minimum

Detailed Pin Configuration

The M29F400FT55M3E2 has a total of 32 pins. Here is the detailed pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. CE - Chip Enable Input
18. OE - Output Enable Input
19. WE - Write Enable Input
20. VCC - Power Supply
21. DQ0 - Data Input/Output
22. DQ1 - Data Input/Output
23. DQ2 - Data Input/Output
24. DQ3 - Data Input/Output
25. DQ4 - Data Input/Output
26. DQ5 - Data Input/Output
27. DQ6 - Data Input/Output
28. DQ7 - Data Input/Output
29. RY/BY# - Ready/Busy Output
30. RESET# - Reset Input
31. GND - Ground
32. NC - No Connection

Functional Features

• Non-volatile Storage: The M29F400FT55M3E2 retains data even when power is removed, ensuring data integrity and reliability.
• Fast Access Time: With an access time of 55 ns, the device allows for quick retrieval and storage of data.
• Easy Integration: The parallel interface simplifies integration into various electronic systems.
• Low Power Consumption: The M29F400FT55M3E2 is designed to minimize power consumption, making it suitable for battery-powered devices.
• Durable Design: The device can withstand multiple erase and program cycles without compromising performance.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data integrity.
• Fast access time allows for efficient data retrieval and storage.
• Low power consumption makes it suitable for battery-powered devices.
• Durable design withstands multiple erase and program cycles.

Disadvantages

• Limited memory capacity compared to newer memory technologies.
• Parallel interface may require additional circuitry for integration into certain systems.

Working Principles

The M29F400FT55M3E2 utilizes flash memory technology for data storage. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, the memory cells are charged or discharged to represent the desired information. During read operations, the stored charge in the memory cells is detected and interpreted as data.

Detailed Application Field Plans

The M29F400FT55M3E2 finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics