M29F200FB55M3E2

Product Overview

Category

The M29F200FB55M3E2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29F200FB55M3E2 retains stored data even when power is disconnected.
• High capacity: With a storage capacity of 2 megabits (256 kilobytes), it can store a significant amount of data.
• Fast access time: The device offers quick read and write operations, ensuring efficient data retrieval and storage.
• Low power consumption: It is designed to consume minimal power during operation, making it suitable for battery-powered devices.

Package

The M29F200FB55M3E2 is available in a compact and durable package, which protects the internal components from external damage.

Essence

This memory device is essential for storing critical data and program instructions in electronic systems, ensuring reliable and persistent data storage.

Packaging/Quantity

The M29F200FB55M3E2 is typically packaged individually and is available in various quantities, depending on the requirements of the customer or application.

Specifications

• Memory Type: Flash EEPROM
• Capacity: 2 Megabits (256 Kilobytes)
• Supply Voltage: 2.7V - 3.6V
• Access Time: 55 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The M29F200FB55M3E2 has a total of 32 pins, each serving a specific function. Here is the detailed pin configuration:

1. VCC: Power supply voltage
2. A0-A16: Address inputs
3. DQ0-DQ7: Data inputs/outputs
4. WE#: Write enable input
5. CE#: Chip enable input
6. OE#: Output enable input
7. RP#/BYTE#: Reset/byte enable input
8. VSS: Ground

Functional Features

• Erase and Program Operations: The M29F200FB55M3E2 supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: Certain sectors of the memory can be locked to prevent accidental erasure or modification.
• Automatic Page Write: This feature enables efficient programming by allowing data to be written directly to a specific page without erasing the entire sector.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data persistence even during power loss.
• High storage capacity accommodates a significant amount of data.
• Fast access time allows for quick data retrieval and storage.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited rewrite cycles: Flash memory has a finite number of erase/write cycles before degradation occurs.
• Relatively higher cost compared to other types of memory.

Working Principles

The M29F200FB55M3E2 utilizes flash EEPROM technology, which combines the benefits of both electrically erasable programmable read-only memory (EEPROM) and flash memory. It stores data using floating-gate transistors that can retain charge even when power is disconnected. To write data, the device applies high voltage to the selected memory cells, altering their charge state. Reading data involves detecting the charge level of each memory cell.

Detailed Application Field Plans

The M29F200FB55M3E2 finds applications in various electronic systems, including: 1. Personal computers 2. Laptops and notebooks 3. Smartphones and tablets 4. Automotive electronics 5. Industrial control systems 6. Medical devices 7. Consumer electronics

Detailed and Complete Alternative Models

1. M29F200FB55M3E1: Similar to the M29F200FB55M3E2, but with a different access time of 70 ns.
2. M29F200FB55M3E3: Similar to the M29F200FB55M3E2, but with a different access time of 45 ns.
3. M29F400FB55M3E2: Double the capacity of the M29F200FB55M3E2, with 4 megabits (512 kilobytes) of storage.

These alternative models offer similar functionality and characteristics, providing options for different application requirements.

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