JS28F128J3F75H

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory technology for long-term data storage
• Packaging/Quantity: Available in various package types (e.g., BGA, TSOP) with different quantities per package

Specifications

• Capacity: 128 megabits (16 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Access Time: 70 ns (max)
• Erase/Program Cycles: 100,000 cycles (typical)

Pin Configuration

The JS28F128J3F75H has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VCC (Power Supply)
2. A0-A18 (Address Inputs)
3. DQ0-DQ15 (Data Inputs/Outputs)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. OE# (Output Enable)
7. RE# (Read Enable)
8. RP#/BYTE# (Reset/Byte#)
9. WP#/ACC (Write Protect/Accumulator)
10. RY/BY# (Ready/Busy#)
11. NC (No Connection)
12. GND (Ground)

Note: This is a simplified representation of the pin configuration. Please refer to the product datasheet for a complete and accurate pinout.

Functional Features

• High-Speed Read/Write: Enables fast data access and transfer.
• Non-Volatile Storage: Retains data even when power is removed.
• Reliable Performance: Designed for long-term use with high endurance.
• Flexible Integration: Compatible with various electronic devices and systems.
• Error Correction Code (ECC): Ensures data integrity and reliability.

Advantages and Disadvantages

Advantages: - High storage capacity - Fast read/write speeds - Non-volatile memory - Reliable performance - Flexible integration options

Disadvantages: - Limited erase/program cycles - Higher cost compared to other memory technologies

Working Principles

The JS28F128J3F75H utilizes a technology called flash memory, which is a type of non-volatile memory. It stores data using floating-gate transistors that can retain charge even when power is removed. The memory cells are organized into blocks, allowing for efficient reading and writing operations. When data needs to be stored or retrieved, the appropriate electrical signals are applied to the pins of the IC, enabling the necessary operations.

Detailed Application Field Plans

The JS28F128J3F75H is widely used in various electronic devices and systems, including but not limited to:

1. Solid-State Drives (SSDs)
2. Embedded Systems
3. Automotive Electronics
4. Industrial Control Systems
5. Networking Equipment
6. Consumer Electronics (e.g., digital cameras, smartphones)

Its high capacity, fast read/write speeds, and reliability make it suitable for applications that require large amounts of data storage and frequent data access.

Alternative Models

There are several alternative models available in the market that offer similar functionality to the JS28F128J3F75H. Some notable alternatives include:

1. Micron MT28EW128ABA1L
2. Samsung K9F1208U0C
3. Toshiba TC58NVG2S0FTA00

These alternative models may have slight differences in specifications and pin configuration, so it is important to consult their respective datasheets for detailed information.

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