JR28F064M29EWTA

Product Overview

Category

JR28F064M29EWTA belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The device has a storage capacity of 64 megabits (8 megabytes).
• Fast access time: Provides quick read and write operations.
• Reliable: Offers high endurance and data retention capabilities.
• Low power consumption: Optimized for energy efficiency.

Package

JR28F064M29EWTA is available in a compact and industry-standard package, making it suitable for integration into different electronic systems.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

This product is typically packaged in trays or reels, with each containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 64 megabits (8 megabytes)
• Interface: Parallel or Serial
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The pin configuration of JR28F064M29EWTA is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ7: Data input/output lines
5. CE: Chip enable
6. WE: Write enable
7. OE: Output enable
8. WP: Write protect
9. RY/BY: Ready/Busy status
10. RESET: Reset signal

Functional Features

• Random access: Allows direct access to any memory location.
• Block erase/write: Supports erasing and writing data in blocks, enhancing efficiency.
• Error correction: Incorporates error correction codes to ensure data integrity.
• Wear leveling: Implements wear leveling algorithms to distribute write operations evenly across the memory cells, extending the product's lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable data retention
• Low power consumption
• Versatile interface options

Disadvantages

• Limited endurance compared to some other non-volatile memory technologies
• Relatively higher cost per bit compared to certain alternatives

Working Principles

JR28F064M29EWTA utilizes flash memory technology for data storage. It consists of a grid of memory cells that can be electrically programmed and erased. The stored information is retained by trapping electric charges within these cells. When data needs to be read or written, specific voltage levels are applied to the appropriate pins, allowing the manipulation of charge levels within the memory cells.

Detailed Application Field Plans

JR28F064M29EWTA finds applications in various fields, including but not limited to: - Personal computers - Laptops and notebooks - Smartphones and tablets - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to JR28F064M29EWTA include: - AT25SF081: Manufactured by Adesto Technologies - S25FL064L: Manufactured by Cypress Semiconductor - MX25L6406E: Manufactured by Macronix International

These alternative models offer similar functionality and can be considered as substitutes based on specific requirements and compatibility considerations.

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