IXTP1R6N50P

Product Overview

Category: Power MOSFET
Use: High-voltage applications
Characteristics: High power handling, low on-resistance, fast switching speed
Package: TO-220AB
Essence: Power management
Packaging/Quantity: Typically sold in reels of 1000 units

Specifications

Voltage Rating: 500V
Current Rating: 1.6A
On-Resistance: 1.5Ω
Gate Charge: 12nC
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IXTP1R6N50P has a standard TO-220AB pin configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features

High voltage capability
Low gate charge
Fast switching speed
Low on-resistance

Advantages and Disadvantages

Advantages

Suitable for high-voltage applications
Low power dissipation
Fast switching characteristics

Disadvantages

Relatively higher cost compared to lower voltage MOSFETs
Higher gate drive requirements

Working Principles

The IXTP1R6N50P operates based on the principles of field-effect transistors, utilizing the control of voltage on the gate terminal to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXTP1R6N50P is commonly used in various high-voltage applications such as: - Switching power supplies - Motor control - Inverters - Lighting ballasts - Industrial equipment

Detailed and Complete Alternative Models

Some alternative models to the IXTP1R6N50P include: - IRFP460 (International Rectifier) - STW20NM50FD (STMicroelectronics) - FQP27P06 (Fairchild Semiconductor)

In conclusion, the IXTP1R6N50P is a high-voltage power MOSFET with excellent power handling capabilities, making it suitable for a wide range of applications in power electronics and industrial systems.

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