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IXTP1R6N50P

IXTP1R6N50P

Product Overview

  • Category: Power MOSFET
  • Use: High-voltage applications
  • Characteristics: High power handling, low on-resistance, fast switching speed
  • Package: TO-220AB
  • Essence: Power management
  • Packaging/Quantity: Typically sold in reels of 1000 units

Specifications

  • Voltage Rating: 500V
  • Current Rating: 1.6A
  • On-Resistance: 1.5Ω
  • Gate Charge: 12nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IXTP1R6N50P has a standard TO-220AB pin configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features

  • High voltage capability
  • Low gate charge
  • Fast switching speed
  • Low on-resistance

Advantages and Disadvantages

Advantages

  • Suitable for high-voltage applications
  • Low power dissipation
  • Fast switching characteristics

Disadvantages

  • Relatively higher cost compared to lower voltage MOSFETs
  • Higher gate drive requirements

Working Principles

The IXTP1R6N50P operates based on the principles of field-effect transistors, utilizing the control of voltage on the gate terminal to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXTP1R6N50P is commonly used in various high-voltage applications such as: - Switching power supplies - Motor control - Inverters - Lighting ballasts - Industrial equipment

Detailed and Complete Alternative Models

Some alternative models to the IXTP1R6N50P include: - IRFP460 (International Rectifier) - STW20NM50FD (STMicroelectronics) - FQP27P06 (Fairchild Semiconductor)

In conclusion, the IXTP1R6N50P is a high-voltage power MOSFET with excellent power handling capabilities, making it suitable for a wide range of applications in power electronics and industrial systems.

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