Category: Power MOSFET
Use: High voltage applications
Characteristics: High voltage, low on-resistance, fast switching
Package: TO-247
Essence: Power transistor for high voltage applications
Packaging/Quantity: Tube/25 units
The IXTH3N200P3HV has a standard TO-247 pin configuration with three pins: gate, drain, and source.
Advantages: - Suitable for high voltage applications - Low on-resistance reduces power dissipation - Fast switching speed improves efficiency
Disadvantages: - Higher cost compared to lower voltage MOSFETs - Larger package size may not be suitable for space-constrained designs
The IXTH3N200P3HV operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
This MOSFET is ideal for use in high voltage applications such as power supplies, motor drives, and inverters. Its high voltage rating and low on-resistance make it suitable for efficient power management in these applications.
In conclusion, the IXTH3N200P3HV is a high-voltage power MOSFET designed for efficient power management in various applications. Its high voltage capability, low on-resistance, and fast switching speed make it a reliable choice for demanding high voltage circuits.
Word count: 298
What is IXTH3N200P3HV?
What are the key features of IXTH3N200P3HV?
In what technical solutions can IXTH3N200P3HV be used?
What are the advantages of using IXTH3N200P3HV in technical solutions?
What is the maximum voltage and current rating of IXTH3N200P3HV?
How does IXTH3N200P3HV compare to other IGBTs in terms of performance?
Are there any specific thermal considerations when using IXTH3N200P3HV?
Can IXTH3N200P3HV be used in parallel configurations for higher power applications?
What protection features does IXTH3N200P3HV offer for safe operation?
Where can I find detailed application notes and technical resources for integrating IXTH3N200P3HV into my technical solution?