IS42S32800G-7BLI

Product Overview

Category

IS42S32800G-7BLI belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a high-speed volatile storage device in electronic systems, such as computers, servers, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Wide temperature range support

Package

IS42S32800G-7BLI is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S32800G-7BLI lies in its ability to provide fast and reliable data storage and retrieval in various electronic systems.

Packaging/Quantity

IS42S32800G-7BLI is typically packaged in trays or reels, with each containing a specific quantity of modules. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 32M words x 8 bits
• Operating Voltage: 3.3V
• Clock Frequency: Up to 166 MHz
• Access Time: 7 ns
• Burst Length: 1, 2, 4, 8, or full page
• Refresh Mode: Auto-refresh, self-refresh
• Interface: Parallel

Detailed Pin Configuration

The pin configuration of IS42S32800G-7BLI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. /CAS
39. /RAS
40. /WE
41. /CS
42. BA0
43. BA1
44. VDD
45. CLK
46. CKE
47. /CKE
48. VSS

Functional Features

• High-speed data transfer
• Random access to memory cells
• Auto-refresh and self-refresh modes for maintaining data integrity
• Support for burst mode operations
• Low power consumption in standby mode
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity
• Compact form factor
• Low power consumption
• Wide temperature range support

Disadvantages

• Volatile memory, requires constant power supply to retain data
• Relatively higher cost compared to other types of memory

Working Principles

IS42S32800G-7BLI operates based on the principles of synchronous dynamic random-access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending row and column addresses to select the desired memory cell. The synchronous nature of the memory allows for high-speed data transfer and synchronization with the system clock.

Detailed Application Field Plans

IS42S32800G-7BLI finds applications in various fields, including: 1. Personal computers 2. Servers 3. Networking equipment 4. Industrial automation systems 5. Medical devices 6. Automotive electronics 7. Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to IS42S32800G-7BLI include: 1. MT48LC32M8A2P-75: Micron Technology Inc. 2. K4S561632H-UC75: Samsung Electronics Co., Ltd. 3. HYB39S256160FE-7: Infineon Technologies AG 4. AS4C32M16SB-7TCN: Alliance Memory Inc. 5. M12L64164A-7T: Macronix International Co., Ltd.

These alternative models offer similar specifications and functionality, providing options for different design requirements.

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