IS42S32400B-6B

Product Overview

Category

IS42S32400B-6B belongs to the category of dynamic random access memory (DRAM) modules.

Use

It is primarily used as a memory component in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compact size for easy integration into various devices

Package

IS42S32400B-6B is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S32400B-6B lies in its ability to provide efficient and reliable data storage and retrieval functions in electronic devices.

Packaging/Quantity

IS42S32400B-6B is typically packaged individually and is available in varying quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 32M words x 4 bits
• Operating Voltage: 3.3V
• Speed Grade: 6B (166 MHz)
• Interface: Parallel
• Data Rate: 333 Mbps
• Refresh Mode: Auto-refresh and self-refresh
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32400B-6B includes various pins for power supply, address inputs, data inputs/outputs, control signals, and clock inputs.

(Please refer to the datasheet or product documentation for the detailed pin configuration diagram.)

Functional Features

• High-speed data transfer with low latency
• Support for burst mode operations
• On-chip refresh circuitry for maintaining data integrity
• Power-saving modes for reduced energy consumption
• Error correction capabilities for improved reliability

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity
• Compact form factor
• Low power consumption
• Error correction capabilities enhance data reliability

Disadvantages

• Volatile memory requires constant power supply
• Relatively higher cost compared to other memory technologies
• Limited lifespan due to the finite number of read/write cycles

Working Principles

IS42S32400B-6B operates based on the principles of synchronous dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory cells are organized into rows and columns, allowing for efficient addressing and retrieval of data.

When a read or write operation is initiated, the memory controller sends the appropriate address and control signals to access the desired memory location. Data is then transferred between the memory module and the device's processor through the parallel interface.

Detailed Application Field Plans

IS42S32400B-6B finds applications in various electronic devices that require high-speed and reliable data storage, such as: - Personal computers - Laptops and notebooks - Servers - Mobile phones and tablets - Gaming consoles - Industrial automation systems - Medical equipment - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to IS42S32400B-6B include: - IS42S16400F-7TLI (16M words x 4 bits) - MT48LC32M16A2P-75IT (32M words x 16 bits) - K4S561632H-UC75 (64M words x 16 bits) - AS4C32M16SB-7TCN (32M words x 16 bits)

These alternative models offer similar functionality and can be considered as replacements based on specific requirements and compatibility.

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